[A-3-1] Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution

Takayuki Aoyama, Hidenobu Fukutome, Satoshi Ohkubo, Kunihiro Suzuki, Hiroko Tashiro, Yoko Tada, Hiroshi Arimoto, Kei Horiuchi, Sigehiko Hasegawa, Hisao Nakashima (1.Fujitsu Laboratories Ltd., 2.The Institute of Scientific and Industrial Research, Osaka University)

https://doi.org/10.7567/SSDM.2001.A-3-1