[A-3-1] Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution

Takayuki Aoyama、Hidenobu Fukutome、Satoshi Ohkubo、Kunihiro Suzuki、Hiroko Tashiro、Yoko Tada、Hiroshi Arimoto、Kei Horiuchi、Sigehiko Hasegawa、Hisao Nakashima (1.Fujitsu Laboratories Ltd.、2.The Institute of Scientific and Industrial Research, Osaka University)

https://doi.org/10.7567/SSDM.2001.A-3-1