[A-3-2] Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO2 and Si/SiOxNy Interfaces
Jiro Ushio、Keiko Kushida-Abdelghafar、Takuya Maruizumi
(1.Advanced Research Laboratory, Hitachi, Ltd.、2.Central Research Laboratory, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.2001.A-3-2