[A-3-4] Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O2/NH3 Plasma

Kazuo Ohtsubo, Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate school of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University, 3.Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

https://doi.org/10.7567/SSDM.2001.A-3-4