[A-5-1] Ultrathin Nitrided-Nanolaminate (Al2O3/ZrO2/Al2O3) for Gate Dielectrics Application

S. Jeon, H. Yang, H. Chang, D. G. Park, K. Y. Lim, In-Seok Yeo, H. Koh, H. W. Yeom, Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 2.Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc., 3.Atomic-scale Surface Science Research Center, Institute of Physics & Applied Physics, Yonsei University)

https://doi.org/10.7567/SSDM.2001.A-5-1