[A-5-1] Ultrathin Nitrided-Nanolaminate (Al2O3/ZrO2/Al2O3) for Gate Dielectrics Application

S. Jeon、H. Yang、H. Chang、D. G. Park、K. Y. Lim、In-Seok Yeo、H. Koh、H. W. Yeom、Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology、2.Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc.、3.Atomic-scale Surface Science Research Center, Institute of Physics & Applied Physics, Yonsei University)

https://doi.org/10.7567/SSDM.2001.A-5-1