[B-10-1] Synthesis of Fluorinated SiNx Gate Dielectric Films Using ECR-PECVD Employing SiF4/N2/H2 Gases

Reiji Morioka, Hiroyuki Ohta, Masaru Hori, Toshio Goto (1.Department of Quantum Engineering, School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.2001.B-10-1