Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs

Chuan H. Liu; Ming T. Lee; Chih-Yung Lin; Jenkon Chen; Klaus Schruefer; Thomas Schiml; Anastasios A. Katsetos; Zhijian Yang; Nivo Rovedo; Terence B. Hook; Clement Wann

doi:https://doi.org/10.7567/SSDM.2001.B-4-2

[B-4-2] Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs

Chuan H. Liu、Ming T. Lee、Chih-Yung Lin、Jenkon Chen、Klaus Schruefer、Thomas Schiml、Anastasios A. Katsetos、Zhijian Yang、Nivo Rovedo、Terence B. Hook、Clement Wann (1.United Microelectronics Corp.、2.Infineon Technologies Corp.、3.IBM Microelectronics Division)

https://doi.org/10.7567/SSDM.2001.B-4-2

2001 International Conference on Solid State Devices and Materials

[B-4-2] Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs