[B-4-4] Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown in Ultrathin Gate Oxides

W. Mizubayashi, Y. Yoshida, S. Miyazaki, M. Hirose (1.Department of Electrical Engineering, Hiroshima University, 2.National Institute of Advanced Industrial Science and Technology (AIST), Advanced Semiconductor Research Center)

https://doi.org/10.7567/SSDM.2001.B-4-4