[B-6-4] Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer

Noriyuki Miyata, Masakazu Ichikawa (1.Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Technology (JRCAT-AIST), 2.Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c/o National Institute of Advanced Industrial Science and Technology)

https://doi.org/10.7567/SSDM.2001.B-6-4