Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON

Taizoh Sadoh; Fitrianto; Atsushi Kenjo; Akihiro Miyauchi; Hironori Inoue; Masanobu Miyao

doi:https://doi.org/10.7567/SSDM.2001.B-7-3

2001 International Conference on Solid State Devices and Materials

2001年9月26日〜 2001年9月28日
Diamond Hotel, Tokyo, Japan

[B-7-3] Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON

Taizoh Sadoh、 Fitrianto、Atsushi Kenjo、Akihiro Miyauchi、Hironori Inoue、Masanobu Miyao (1.Department of Electronics, Kyushu University、2.Hitachi Research Laboratory, Hitachi)

https://doi.org/10.7567/SSDM.2001.B-7-3

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