RF Power Performance of AlGaN/GaN HJFETs

N. Hayama; Y. Okamoto; K. Kasahara; T. Nakayama; Y. Ohno; H. Miyamoto; Y. Ando; M. Kazuhara; NEC, Japan

doi:https://doi.org/10.7567/SSDM.2001.C-1-1

[C-1-1] RF Power Performance of AlGaN/GaN HJFETs

N. Hayama, Y. Okamoto, K. Kasahara, T. Nakayama, Y. Ohno, H. Miyamoto, Y. Ando, M. Kazuhara, NEC, Japan (1.Photonic and Wireless Devices Research Laboratories, NEC Corporation, 2.The University of Tokushima)

https://doi.org/10.7567/SSDM.2001.C-1-1

2001 International Conference on Solid State Devices and Materials

[C-1-1] RF Power Performance of AlGaN/GaN HJFETs