[C-1-1] RF Power Performance of AlGaN/GaN HJFETs
N. Hayama、Y. Okamoto、K. Kasahara、T. Nakayama、Y. Ohno、H. Miyamoto、Y. Ando、M. Kazuhara、 NEC, Japan
(1.Photonic and Wireless Devices Research Laboratories, NEC Corporation、2.The University of Tokushima)
https://doi.org/10.7567/SSDM.2001.C-1-1