RF Power Performance of AlGaN/GaN HJFETs

N. Hayama; Y. Okamoto; K. Kasahara; T. Nakayama; Y. Ohno; H. Miyamoto; Y. Ando; M. Kazuhara; NEC, Japan

doi:https://doi.org/10.7567/SSDM.2001.C-1-1

2001 International Conference on Solid State Devices and Materials

2001年9月26日〜 2001年9月28日
Diamond Hotel, Tokyo, Japan

[C-1-1] RF Power Performance of AlGaN/GaN HJFETs

N. Hayama、Y. Okamoto、K. Kasahara、T. Nakayama、Y. Ohno、H. Miyamoto、Y. Ando、M. Kazuhara、 NEC, Japan (1.Photonic and Wireless Devices Research Laboratories, NEC Corporation、2.The University of Tokushima)

https://doi.org/10.7567/SSDM.2001.C-1-1

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