[C-1-4] Investigation of Low-Frequency Noise Behavior of In0.52Al0.48As/In0.60Ga0.40As Metamorphic High Electron Mobility Transistors

Jeong Hoon Kim、Hyung-Sup Yoon、Jin-Hee Lee、Kyung Ho Lee、Jong-In Song (1.Dept. of Information and Communications, K-JIST、2.Microwave Devices Team, ETRI)

https://doi.org/10.7567/SSDM.2001.C-1-4