[C-5-3] Highly Stable Microprocessor Using SiGe Inserted SOI MOSFET

Hee-Sung Kang、Young-Wug Kim、Kong-Soo Chung、Ki-Mun Nam、Geum-Jong Bae、Nae-In Lee、Kwang-Pyuk Suh (1.Technology Development Group, SOC Technology, System LSI Division, Samsung Electronics、2.Process Development Team, Samsung Electronics)

https://doi.org/10.7567/SSDM.2001.C-5-3