Si1-xf120Gex/Si Triple-Barrier RTD with a Peak-to-Valley Ratio of ≧ 180 at RT Formed Using an Annealed Thin Multilayer Buffer

[D-10-2] Si1-xf120Gex/Si Triple-Barrier RTD with a Peak-to-Valley Ratio of ≧ 180 at RT Formed Using an Annealed Thin Multilayer Buffer

Satoshi Yamaguchi, Akihiko Meguro, Yoshiyuki Suda (1.Faculty of Technology, Tokyo University of Agriculture and Technology)