The Japan Society of Applied Physics

[D-10-5] The Formation of Resonance Tunnel Device by γ-Al2O3/Si Multiple Hetrostructure

Y. Koji, M. Shahjahan, R. Ito, K. Sawada, M. Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.2001.D-10-5