Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy

Y. Hagio; T. Maruyama; Y. Nanishi; K. Akimoto; T. Miyajima; S. Kijima

doi:https://doi.org/10.7567/SSDM.2001.E-1-6

[E-1-6] Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy

Y. Hagio, T. Maruyama, Y. Nanishi, K. Akimoto, T. Miyajima, S. Kijima (1.Inst. of Applied Physics, Univ. of Tsukuba, 2.Dept. of Photonics, Ritsumeikan Univ., 3.Sony Corporation Research Center)

https://doi.org/10.7567/SSDM.2001.E-1-6

2001 International Conference on Solid State Devices and Materials

[E-1-6] Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy