[E-5-6] Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide, Mitsuaki Shimizu, Akira Suzuki, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto (1.Department of Science and Technology, Graduated School of Meiji University, 2.National Institute of Advanced Industrial Science and Technology, 3.Graduate School of Engineering, Tokai University)

https://doi.org/10.7567/SSDM.2001.E-5-6