Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide; Mitsuaki Shimizu; Akira Suzuki; Xu-Qiang Shen; Hajime Okumura; Toshio Nemoto

doi:https://doi.org/10.7567/SSDM.2001.E-5-6

[E-5-6] Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide、Mitsuaki Shimizu、Akira Suzuki、Xu-Qiang Shen、Hajime Okumura、Toshio Nemoto (1.Department of Science and Technology, Graduated School of Meiji University、2.National Institute of Advanced Industrial Science and Technology、3.Graduate School of Engineering, Tokai University)

https://doi.org/10.7567/SSDM.2001.E-5-6

2001 International Conference on Solid State Devices and Materials

[E-5-6] Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors