[E-5-7] SiC/SiO2 Structure Formed at ～200℃ with Excellent Electrical Characteristics

Takeaki Sakurai, Jong Wook Park, Yasushiro Nishioka, Masayoshi Nishiyama, Hikaru Kobayashi (1.Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Corporation, 2.Tsukuba Research and Development Center, Japan Texas Instruments, 3.Central Workshop, Osaka University)

https://doi.org/10.7567/SSDM.2001.E-5-7