Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer

Ryoji Hiroyama; Daijiro Inoue; Yasuhiko Nomura; Yasuhiro Ueda; Masayuki Shono; Minoru Sawada

doi:https://doi.org/10.7567/SSDM.2001.E-8-4

[E-8-4] Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer

Ryoji Hiroyama, Daijiro Inoue, Yasuhiko Nomura, Yasuhiro Ueda, Masayuki Shono, Minoru Sawada (1.Microelectronics Research Center, SANYO Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.2001.E-8-4

2001 International Conference on Solid State Devices and Materials

[E-8-4] Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer