[F-3-3] HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production

Yukihiro Kiyota, Tsutomu Udo, Takashi Hashimoto, Akihiro Kodama, Hiromi Shimamoto, Reiko Hayami, Eiji Ohue, Katsuyoshi Washio (1.Central Research Laboratory, Hitachi, Ltd., 2.Hitachi ULSI Systems Co., Ltd., 3.Device Development Center, Hitachi, Ltd., 4.Musashino Office, Hitachi Device Engineering Co., Ltd.)

https://doi.org/10.7567/SSDM.2001.F-3-3