Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

Takamitsu Ishihara; Kazuya Matsuzawa; Mariko Takayanagi; Shin-ichi Takagi

doi:https://doi.org/10.7567/SSDM.2001.F-4-3

[F-4-3] Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

Takamitsu Ishihara、Kazuya Matsuzawa、Mariko Takayanagi、Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba corporation、2.Semiconductor company, System LSI Division, Toshiba corporation)

https://doi.org/10.7567/SSDM.2001.F-4-3

2001 International Conference on Solid State Devices and Materials

[F-4-3] Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness