[LB-2-2] Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation

K. Shibahara, Y. Ishikawa, D. Onimatu, N. Maeda, A. Mineji, K. Kagawa, A. Matuno, T. Nire (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.NEC ULSI Device Development Division, 3.Research Center, Research Division, Komatsu Ltd.)

https://doi.org/10.7567/SSDM.2001.LB-2-2