Single Electron Transistor Using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate

Koji Kawasaki; Daisuke Yamazaki; Masaki Suzuki; Kazuo Tsutsui; Yoshinobu Aoyagi

doi:https://doi.org/10.7567/SSDM.2001.P-1-16

[P-1-16] Single Electron Transistor Using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate

Koji Kawasaki, Daisuke Yamazaki, Masaki Suzuki, Kazuo Tsutsui, Yoshinobu Aoyagi (1.Tokyo Institute of Technology, Interdisciplinary Graduate School of Science & Engineering, 2.The Institute of Physical and Chemical Research (RIKEN), 3.CREST, JST (Japan Science and Technology))

https://doi.org/10.7567/SSDM.2001.P-1-16

2001 International Conference on Solid State Devices and Materials

[P-1-16] Single Electron Transistor Using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate