The Japan Society of Applied Physics

338 results (51 - 60)

[E-1-3] Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates

Hiromitsu Kudo, Kenji Murakami, Ruisheng Zheng, Yoichi Yamada, Tsunemasa Taguchi, Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi, Takashi Tsunekawa, Yoshiyuki Imada, Munehiro Kato (1.Faculty of Engineering, Yamaguchi University, 2.Mitsubishi Cable Industries, LTD., Photonics Research Laboratory, 3.Stanley Electric Co., LTD., Research & Development Department)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-1-4] A p-down InGaN/GaN MQW LED Structure Grown by MOVPE

C. H. Ko, S. J. Chang, Y. K. Su, C. I. Chiang, W. J. Lin, W. H. Lan, Y. T. Cherng (1.National Cheng-Kung University, 2.Department of Electrical Engineering National Cheng Kung University, 3.Materials R&D Center Chung-Shan Institute of Science & Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

338 results (51 - 60)