Evaluation of change in drain current due to strain in 0.13-μm-node MOSFETs

Yukihiro Kumagai; Hiroyuki Ohta; Hideo Miura; Fumitoshi Ito; Keiichi Maekawa; Akihiro Shimizu

doi:https://doi.org/10.7567/SSDM.2002.A-1-4

[A-1-4] Evaluation of change in drain current due to strain in 0.13-μm-node MOSFETs

Yukihiro Kumagai、Hiroyuki Ohta、Hideo Miura、Fumitoshi Ito、Keiichi Maekawa、Akihiro Shimizu (1.Mechanical Engineering Research Laboratory, Hitachi, Ltd.、2.Semiconductor & Integrated Circuits Div., Hitachi, Ltd.、3.Hitachi ULSI Systems, Co.)

https://doi.org/10.7567/SSDM.2002.A-1-4

2002 International Conference on Solid State Devices and Materials

[A-1-4] Evaluation of change in drain current due to strain in 0.13-μm-node MOSFETs