The Japan Society of Applied Physics

[A-4-2] Experimental Evidence of Low Dislocation Density of SiGe-on-Insulator Substrates Fabricated by Oxidizing SiGe/SOI Structures

N. Sugiyama, Y. Moriyama, T. Tezuka, T. Mizuno, S. Nakaharai, K. Usuda, S. Takagi (1.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET))

https://doi.org/10.7567/SSDM.2002.A-4-2