Experimental Evidence of Low Dislocation Density of SiGe-on-Insulator Substrates Fabricated by Oxidizing SiGe/SOI Structures

N. Sugiyama; Y. Moriyama; T. Tezuka; T. Mizuno; S. Nakaharai; K. Usuda; S. Takagi

doi:https://doi.org/10.7567/SSDM.2002.A-4-2

[A-4-2] Experimental Evidence of Low Dislocation Density of SiGe-on-Insulator Substrates Fabricated by Oxidizing SiGe/SOI Structures

N. Sugiyama、Y. Moriyama、T. Tezuka、T. Mizuno、S. Nakaharai、K. Usuda、S. Takagi (1.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET))

https://doi.org/10.7567/SSDM.2002.A-4-2

2002 International Conference on Solid State Devices and Materials

[A-4-2] Experimental Evidence of Low Dislocation Density of SiGe-on-Insulator Substrates Fabricated by Oxidizing SiGe/SOI Structures