Effects of Metal Concentration Nonuniformity in Gate Dielectric Silicates on Propagation Delay Time of CMIS Inverters

Mizuki Ono; Tsunehiro Ino; Masato Koyama; Akira Takashima; Akira Nishiyama

doi:https://doi.org/10.7567/SSDM.2002.A-9-4

[A-9-4] Effects of Metal Concentration Nonuniformity in Gate Dielectric Silicates on Propagation Delay Time of CMIS Inverters

Mizuki Ono、Tsunehiro Ino、Masato Koyama、Akira Takashima、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Environmental Engineering and Analysis Center, Corporate R & D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2002.A-9-4

2002 International Conference on Solid State Devices and Materials

[A-9-4] Effects of Metal Concentration Nonuniformity in Gate Dielectric Silicates on Propagation Delay Time of CMIS Inverters