A Theoretical Study of SiO2-rich Zr and Hf Silicates as High-k Gate Insulators

Tomoyuki Hamada; Takuya Maruizumi; Yuuichi Matsui; Masahiko Hiratani

doi:https://doi.org/10.7567/SSDM.2002.B-1-5

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[B-1-5] A Theoretical Study of SiO2-rich Zr and Hf Silicates as High-k Gate Insulators

Tomoyuki Hamada, Takuya Maruizumi, Yuuichi Matsui, Masahiko Hiratani (1.Advanced Research Laboratory, Hitachi Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.2002.B-1-5

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