The Japan Society of Applied Physics

[B-6-1] Drastic Leakage Suppression by Through-Oxide Arsenic Pre-SALICIDE Implantation for CoSi2 Formation on Shallow n+/p Junctions

M. Tsuchiaki、A. Murakoshi、C. Hongo (1.Corporate Research & Development Center, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Toshiba Semiconductor Company)

https://doi.org/10.7567/SSDM.2002.B-6-1