Drastic Leakage Suppression by Through-Oxide Arsenic Pre-SALICIDE Implantation for CoSi2 Formation on Shallow n+/p Junctions

M. Tsuchiaki; A. Murakoshi; C. Hongo

doi:https://doi.org/10.7567/SSDM.2002.B-6-1

[B-6-1] Drastic Leakage Suppression by Through-Oxide Arsenic Pre-SALICIDE Implantation for CoSi2 Formation on Shallow n+/p Junctions

M. Tsuchiaki、A. Murakoshi、C. Hongo (1.Corporate Research & Development Center, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Toshiba Semiconductor Company)

https://doi.org/10.7567/SSDM.2002.B-6-1

2002 International Conference on Solid State Devices and Materials

[B-6-1] Drastic Leakage Suppression by Through-Oxide Arsenic Pre-SALICIDE Implantation for CoSi2 Formation on Shallow n+/p Junctions