[B-9-5] Highly Reliable DRAM Technology for ASM with Dual Nitrogen Concentration Gate Oxynitrides using Selective Nitrogen Implantation

Taro Sugizaki, Atsushi Murakoshi, Tetsu Tanaka, Ryota Katsumata, Toshiro Nakanishi, Yasuo Nara (1.Fujitsu Laboratories Ltd., 2.Toshiba Corporation)

https://doi.org/10.7567/SSDM.2002.B-9-5