[B-9-5] Highly Reliable DRAM Technology for ASM with Dual Nitrogen Concentration Gate Oxynitrides using Selective Nitrogen Implantation

Taro Sugizaki、Atsushi Murakoshi、Tetsu Tanaka、Ryota Katsumata、Toshiro Nakanishi、Yasuo Nara (1.Fujitsu Laboratories Ltd.、2.Toshiba Corporation)

https://doi.org/10.7567/SSDM.2002.B-9-5