Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer

T. Shiraishi; T. Nakamura; K. Takahashi; I. Kashiwagi; C. Ohshima; H. Nohira; S. Ohmi; H. Iwai; T. Hattori

doi:https://doi.org/10.7567/SSDM.2002.C-8-2

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[C-8-2] Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer

T. Shiraishi, T. Nakamura, K. Takahashi, I. Kashiwagi, C. Ohshima, H. Nohira, S. Ohmi, H. Iwai, T. Hattori (1.Musashi Institute of Technology, 2.Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2002.C-8-2

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