Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer

T. Shiraishi; T. Nakamura; K. Takahashi; I. Kashiwagi; C. Ohshima; H. Nohira; S. Ohmi; H. Iwai; T. Hattori

doi:https://doi.org/10.7567/SSDM.2002.C-8-2

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[C-8-2] Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer

T. Shiraishi、T. Nakamura、K. Takahashi、I. Kashiwagi、C. Ohshima、H. Nohira、S. Ohmi、H. Iwai、T. Hattori (1.Musashi Institute of Technology、2.Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2002.C-8-2

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