[C-9-3] Boron doped Polycrystalline Si1-XGeX Resistors for High Precision Analog ICs

H. Watanabe、M. Tamura、M. Dainin、M. Seto、T. Shohbu、Y. Ohsako、Y. Takimoto、Y. Ishimoto、H. Ino、E. Imanishi、M. Satoh、H. Satoh、K. Yamashita、K. Taniguchi (1.Electronic Devices Company, Ricoh Co. Ltd.、2.Department of Electronics and Information Systems, Faculty of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2002.C-9-3