Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel

Kazuhiko Matsumoto; Seizo Kinoshita; Kousuke Kurachi; Yoshitaka Gotoh; Yuji Awano

doi:https://doi.org/10.7567/SSDM.2002.F-1-3

[F-1-3] Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel

Kazuhiko Matsumoto, Seizo Kinoshita, Kousuke Kurachi, Yoshitaka Gotoh, Yuji Awano (1.Advanced Industrial Science & Technology, CREST, 2.Fujitsu Laboratory)

https://doi.org/10.7567/SSDM.2002.F-1-3

2002 International Conference on Solid State Devices and Materials

[F-1-3] Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel