Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel

Kazuhiko Matsumoto; Seizo Kinoshita; Kousuke Kurachi; Yoshitaka Gotoh; Yuji Awano

doi:https://doi.org/10.7567/SSDM.2002.F-1-3

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[F-1-3] Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel

Kazuhiko Matsumoto、Seizo Kinoshita、Kousuke Kurachi、Yoshitaka Gotoh、Yuji Awano (1.Advanced Industrial Science & Technology, CREST、2.Fujitsu Laboratory)

https://doi.org/10.7567/SSDM.2002.F-1-3

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