Programmable conductivity of silicon nanowires with side gates by surface charging

T. Matsukawa; S. Kanemaru; M. Masahara; M. Nagao; H. Tanoue; J. Itoh

doi:https://doi.org/10.7567/SSDM.2002.F-2-4

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[F-2-4] Programmable conductivity of silicon nanowires with side gates by surface charging

T. Matsukawa, S. Kanemaru, M. Masahara, M. Nagao, H. Tanoue, J. Itoh (1.Nanoelectronics Research Inst., AIST, 2.Core Research for Evolutional Science and Technology Program (CREST))

https://doi.org/10.7567/SSDM.2002.F-2-4

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