[G-1-5] Doping Design and Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

Narihiko Maeda、Kotaro Tsubaki、Tadashi Saitoh、Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2002.G-1-5