Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy

Atsushi Koizumi; Kentaro Inoue; Yasufumi Fujiwara; Taketoshi Yoshikane; Akira Urakami; Yoshikazu Takeda

doi:https://doi.org/10.7567/SSDM.2002.G-2-3

[G-2-3] Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy

Atsushi Koizumi、Kentaro Inoue、Yasufumi Fujiwara、Taketoshi Yoshikane、Akira Urakami、Yoshikazu Takeda (1.Dept. of Materials Science and Engineering, Graduate School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.2002.G-2-3

2002 International Conference on Solid State Devices and Materials

[G-2-3] Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy