[G-2-5] Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by GSMBE Using Tertiarybutylphosphine (TBP)

T. Kakumu, F. Ishikawa, S. Kasai, T. Hashizume, H. Hasegawa (1.Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.2002.G-2-5