[G-2-5] Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by GSMBE Using Tertiarybutylphosphine (TBP)

T. Kakumu、F. Ishikawa、S. Kasai、T. Hashizume、H. Hasegawa (1.Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.2002.G-2-5