Thin GaN on Sapphire with Reduced Bowing by Large Area Laser Lift-off Technique

Masahiro Ishida; Tetsuzo Ueda; Masaaki Yuri

doi:https://doi.org/10.7567/SSDM.2002.G-8-2

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[G-8-2] Thin GaN on Sapphire with Reduced Bowing by Large Area Laser Lift-off Technique

Masahiro Ishida, Tetsuzo Ueda, Masaaki Yuri (1.Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2002.G-8-2

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