[G-8-3] Structural Properties on GaN Film through the Introduction of AlN Buffer Layers with Variable Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy

Byoung-Rho Shim, Hideyuki Okita, Kulandaivel Jeganathan, Mitsuaki Shimizu, Hajime Okumura (1.Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 2.Science University of Tokyo, Department of Electrical Engineering)

https://doi.org/10.7567/SSDM.2002.G-8-3