[G-8-3] Structural Properties on GaN Film through the Introduction of AlN Buffer Layers with Variable Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy

Byoung-Rho Shim、Hideyuki Okita、Kulandaivel Jeganathan、Mitsuaki Shimizu、Hajime Okumura (1.Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2、2.Science University of Tokyo, Department of Electrical Engineering)

https://doi.org/10.7567/SSDM.2002.G-8-3