[G-8-4] GaN-Based Light-Emitting Diodes With Si-doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer

C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, J. M. Tsai (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 2.Optical Science Center, National Central University, 3.South Epitaxy Corporation)

https://doi.org/10.7567/SSDM.2002.G-8-4